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IS42S32160F Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS42S32160F Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 68 page IS42/45R86400F/16320F/32160F IS42/45S86400F/16320F/32160F Integrated Silicon Solution, Inc. — www.issi.com 1 Rev. 00A 11/5/2013 Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with- out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such ap- plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances FEATURES • Clock frequency: 200, 166, 143 MHz • Fullysynchronous;allsignalsreferencedtoa positive clock edge • Internalbankforhidingrowaccess/precharge • Powersupply:Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD-Vdd/Vddq = 3.3V IS42/45RxxxxxD-Vdd/Vddq = 2.5 • LVTTLinterface • Programmableburstlength – (1, 2, 4, 8, full page) • Programmableburstsequence: Sequential/Interleave • AutoRefresh(CBR) • SelfRefresh • 8Krefreshcyclesevery64ms • Randomcolumnaddresseveryclockcycle • ProgrammableCAS latency (2, 3 clocks) • Burstread/writeandburstread/singlewrite operations capability • Burstterminationbyburststopandprecharge command • Packages: x8/x16:54-pinTSOP-II,54-ballTF-BGA(x16only) x32:90-ballTF-BGA,86-pinTSOP-ll • TemperatureRange: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +105oC) 16Mx32, 32Mx16, 64Mx8 512Mb SDRAM ADVANCED INFORMATION NOVEMBER 2013 KEY TIMING PARAMETERS Parameter -5 -6 -7 Unit ClkCycleTime CAS Latency=3 5 6 7 ns CAS Latency=2 10 10 7.5 ns ClkFrequency CAS Latency=3 200 167 143 Mhz CAS Latency=2 100 100 133 Mhz AccessTimefromClock CAS Latency=3 5.0 5.4 5.4 ns CAS Latency=2 6 6 5.4 ns ADDRESS TABLE Parameter 16M x 32 32M x 16 64M x 8 Configuration 4M x 32 x 4 banks 8M x 16 x 4 banks 16M x 8 x 4 banks BankAddress Pins BA0,BA1 BA0,BA1 BA0,BA1 Autoprecharge Pins A10/AP A10/AP A10/AP Row Address 8K(A0–A12) 8K(A0–A12) 8K(A0–A12) Column Address 512(A0 – A8) 1K(A0–A9) 2K(A0–A9, A11) Refresh Count Com./Ind./A1 A2 8K/64ms 8K/16ms 8K/64ms 8K/16ms 8K/64ms 8K/16ms DEVICE OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The512MbSDRAMisorganizedasfollows. IS42/45S32160D IS42/45S16320D IS42/45S86400D IS42/45R32160D IS42/45R16320D IS42/45R86400D 4M x 32 x 4 banks 8M x 16 x 4 banks 16M x 8 x 4 banks 90-ballTF-BGA 54-pinTSOP-II 54-pinTSOP-II 86-pinTSOP-ll 54-ballTF-BGA PACKAGE INFORMATION |
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