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IS42S32800G-7B Datasheet(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS42S32800G-7B Datasheet(HTML) 1 Page - Integrated Silicon Solution, Inc |
1 / 58 page Integrated Silicon Solution, Inc. - www.issi.com 1 Rev. A 07/18/2012 Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat- est version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason- ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances IS42S32800G IS45S32800G FEATURES • Clockfrequency:200,166,143MHz • Fullysynchronous;allsignalsreferencedtoa positive clock edge • Internalbankforhidingrowaccess/precharge • SinglePowersupply:3.3V+0.3V • LVTTLinterface • Programmableburstlength –(1,2,4,8,fullpage) • Programmableburstsequence: Sequential/Interleave • AutoRefresh(CBR) • SelfRefresh • 4096refreshcyclesevery16ms(A2grade)or 64ms(Commercial,Industrial,A1grade) • Randomcolumnaddresseveryclockcycle • ProgrammableCASlatency(2,3clocks) • Burstread/writeandburstread/singlewrite operations capability • Burstterminationbyburststopandprecharge command OPTIONS • Package: 90-ballTF-BGA • OperatingTemperatureRange: Commercial (0oC to +70oC) Industrial(-40oC to +85oC) AutomotiveGrade,A1(-40oC to +85oC) AutomotiveGrade,A2(-40oC to +105oC) OVERVIEW ISSI's256MbSynchronousDRAMachieveshigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks. 8M x 32 256Mb SYNCHRONOUS DRAM AUGUST 2012 KEY TIMING PARAMETERS Parameter -5 -6 -7 Unit ClkCycleTime CAS Latency=3 5 6 7 ns CAS Latency=2 10 10 7.5 ns ClkFrequency CAS Latency=3 200 166 143 Mhz CAS Latency=2 100 100 133 Mhz AccessTimefromClock CAS Latency=3 4.8 5.4 5.4 ns CAS Latency=2 6.5 6.5 5.5 ns ADDRESS TABLE Parameter 8M x 32 Configuration 2Mx32x4banks RefreshCount Com./Ind. A1 A2 4K/64ms 4K/64ms 4K/16ms RowAddresses A0 – A11 Column Addresses A0 – A8 BankAddress Pins BA0,BA1 Autoprecharge Pins A10/AP |
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