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FDC2214QRGHRQ1 Datasheet(PDF) 4 Page - Texas Instruments |
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FDC2214QRGHRQ1 Datasheet(HTML) 4 Page - Texas Instruments |
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4 / 58 page  4 FDC2112-Q1, FDC2114-Q1, FDC2212-Q1, FDC2214-Q1 SNOSCZ9 – MAY 2016 www.ti.com Product Folder Links: FDC2112-Q1 FDC2114-Q1 FDC2212-Q1 FDC2214-Q1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VDD Supply voltage 5 V Vi Voltage on any pin –0.3 VDD + 0.3 V IA Input current on any INx pin –8 8 mA ID Input current on any digital pin –5 5 mA TJ Junction temperature –55 150 °C Tstg Storage temperature –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±750 6.3 Recommended Operating Conditions Unless otherwise specified, all limits ensured for TA = 25°C, VDD = 3.3 V MIN NOM MAX UNIT VDD Supply voltage 2.7 3.6 V TA Operating temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) FDC2112 / FDC2212 FDC2214 / FDC2214 UNIT DNT (WSON) RGH (WQFN) 12 PINS 16 PINS RθJA Junction-to-ambient thermal resistance 36.7 35.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 36.2 36.2 °C/W RθJB Junction-to-board thermal resistance 14 13.4 °C/W ψJT Junction-to-top characterization parameter 0.4 0.4 °C/W ψJB Junction-to-board characterization parameter 14.2 13.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 3.5 3.5 °C/W |
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