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IS61QDB41M18A Datasheet(PDF) 9 Page - Integrated Silicon Solution, Inc |
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IS61QDB41M18A Datasheet(HTML) 9 Page - Integrated Silicon Solution, Inc |
9 / 30 page IS61QDB41M18A IS61QDB451236A Integrated Silicon Solution, Inc.- www.issi.com Rev. B 10/02/2014 9 State Diagram Power-Up Read NOP Write NOP Load New Read Address D count = 0 Load New Write Address D count = 0 DDR-II Read D count = D count +1 DDR-II Write D count = D count +1 Increment Read Address Increment Write Address Read# Write# Read Write Read D count = 2 Write D count = 2 Always Always Read D count = 1 Write D count = 1 Always Always Write# D count = 2 Read# D count = 2 Notes: 1. Internal burst counter is fixed as four-bit linear; that is when first address is A0+0, next internal burst addresses are A0+1, A0+2, and A0+3. 2. Read refers to read active status with R# = LOW. Read# refers to read inactive status with R# = HIGH. 3. Write refers to write active status with W# = LOW. Write# refers to write inactive status with W# = HIGH. 4. The read and write state machines can be active simultaneously. 5. State machine control timing sequence is controlled by K. |
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