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IS61QDP2B22M18A1 Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part # IS61QDP2B22M18A1
Description  1Mx36 and 2Mx18 configuration available
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61QDP2B22M18A1 Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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IS61QDP2B22M18A/A1/A2
IS61QDP2B21M36A/A1 /A2
Integrated Silicon Solution, Inc.- www.issi.com
Rev. B
10/02/2014
5
Whenever a write is disabled (W# is high at the rising edge of K), data is not written into the memory.
RQ Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust
its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the
SRAM. For example, an RQ of 250Ω results in a driver impedance of 50Ω. The allowable range of RQ to guarantee
impedance matching is between 175Ω and 350Ω at V
DDQ=1.5V. The RQ resistor should be placed less than two inches
away from the ZQ ball on the SRAM module. The capacitance of the loaded ZQ trace must be less than 7.5pF.
The ZQ pin can also be directly connected to V
DDQ
to obtain a minimum impedance setting. ZQ must never be
connected to V
SS
.
Programmable Impedance and Power-Up Requirements
Periodic readjustment of the output driver impedance is necessary as the impedance is greatly affected by drifts in
supply voltage and temperature. During power-up, the driver impedance is in the middle of allowable impedances
value. The final impedance value is achieved within 1024 clock cycles.
Depth Expansion
Separate input and output ports enable easy depth expansion, as each port can be selected and deselected
independently. Read and write operations can occur simultaneously without affecting each other. Also, all pending
read and write transactions are always completed prior to deselecting the corresponding port.
Valid Data Indicator (QVLD)
A data valid pin (QVLD) is available to assist in high-speed data output capture. This output signal is edge-aligned with
the echo clock and is asserted HIGH half a cycle before valid read data is available and asserted LOW half a cycle
before the final valid read data arrives.
Delay Locked Loop (DLL)
Delay Locked Loop (DLL) is a new system to align the output data coincident with clock rising or falling edge to
enhance the output valid timing characteristics. It is locked to the clock frequency and is constantly adjusted to match
the clock frequency. Therefore device can have stable output over the temperature and voltage variation.
DLL has a limitation of locking range and jitter adjustment which are specified as tKHKH and tKCvar respectively in the
AC timing characteristics. In order to turn this feature off, applying logic low to the Doff# pin will bypass this. In the DLL
off mode, the device behaves with one clock cycle latency and a longer access time which is known in DDR-I or legacy
QUAD mode.
The DLL can also be reset without power down by toggling Doff# pin low to high or stopping the input clocks K and K#
for a minimum of 30ns.(K and K# must be stayed either at higher than VIH or lower than VIL level. Remaining Vref is
not permitted.) DLL reset must be issued when power up or when clock frequency changes abruptly. After DLL being
reset, it gets locked after 2048 cycles of stable clock.
ODT (On Die Termination)
On Die Termination (ODT) is a feature that allows a SRAM to change input resistive termination condition by ODT pin
which function can have three status, High, Low, and Floating. Each status can have different ODT termination value


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