Electronic Components Datasheet Search |
|
SN74CBTU4411 Datasheet(PDF) 1 Page - Texas Instruments |
|
SN74CBTU4411 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 21 page H10 EN1 D10 Charge (see Note A) (see Note A) (see Note A) (see Note A) (see Note B) (see Note B) (see Note C) (see Note D) (see Note D) Pump VDD EN2 VBIAS_DQS VDD VBIAS M4 r4 EN_DQS1 M6 r6 M5 r5 EN_DQS2 H (see Note A) D (see Note B) (see Note C) EN (see Note D) Charge Pump VBIAS M3 r3 VDD Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. SN74CBTU4411 SCDS192A – APRIL 2005 – REVISED FEBRUARY 2016 SN74CBTU4411 11-Bit 1-of-4 Multiplexer/Demultiplexer 1.8-V DDR-II Switch With Charge Pump and Precharged Outputs 1 1 Features 1 • Supports SSTL_18 Signaling Levels • Suitable for DDR-II Applications • D-Port Outputs are Precharged by Bias Voltage (VBIAS) • Internal Termination for Control Inputs • High Bandwidth (400 MHz Minimum) • Low and Flat ON-State Resistance (ron) Characteristics, (ron = 17 Ω Maximum) • Internal 400- Ω Pulldown Resistors • Low Differential and Rising or Falling Edge Skew • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II 2 Applications • ATCA Solutions • Automated External Defibrillators • Adaptive Lighting • Blood Gas Analyzers: Portable • Bluetooth Headsets • CT Scanners • Cameras: Surveillance Analog • Chemical and Gas Sensors • DLP 3D Machine Vision and Optical Networking 3 Description The SN74CBTU4411 device is a high-bandwidth, SSTL_18 compatible FET multiplexer/demultiplexer with low ON-state resistance (ron). The device uses an internal charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ron. The low and flat ron allows for minimal propagation delay and supports rail-to-rail signaling on data input/output (I/O) ports. The device also features very low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Matched ron and I/O capacitance among channels results in extremely low differential and rising or falling edge skew. This allows the device to show optimal performance in DDR-II applications. Device Information(1) PART NUMBER PACKAGE BODY SIZE SN74CBTU4411ZST NFBGA (72) 7.00 mm × 7.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Schematic, Each FET Switch (SW1) A. Applicable for ports H0 through H9 B. Applicable for ports D0 through D9 C. r3 + ron (M3) = 400 Ω typical. D. EN is the internal enable signal applied to the switch. Simplified Schematic, Each FET Switch (SW2) A. EN_DQS1, EN_DQS2, EN1, and EN2 are the internal enable signals applied to the switch. B. r4 + ron (M4) = 1 kΩ typical. C. r5 + ron (M5) = 400 Ω typical. D. r6 + ron (M6) = 2.3 kΩ typical. |
Similar Part No. - SN74CBTU4411_16 |
|
Similar Description - SN74CBTU4411_16 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |