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SN74CBTU4411 Datasheet(PDF) 1 Page - Texas Instruments

Part # SN74CBTU4411
Description  Multiplexer/Demultiplexer
Download  21 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

SN74CBTU4411 Datasheet(HTML) 1 Page - Texas Instruments

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H10
EN1
D10
Charge
(see Note A)
(see Note A)
(see Note A)
(see Note A)
(see Note B)
(see Note B)
(see
Note C)
(see Note D)
(see
Note D)
Pump
VDD
EN2
VBIAS_DQS
VDD
VBIAS
M4
r4
EN_DQS1
M6
r6
M5
r5
EN_DQS2
H
(see Note A)
D
(see Note B)
(see Note C)
EN
(see Note D)
Charge
Pump
VBIAS
M3
r3
VDD
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
SN74CBTU4411
SCDS192A – APRIL 2005 – REVISED FEBRUARY 2016
SN74CBTU4411 11-Bit 1-of-4 Multiplexer/Demultiplexer
1.8-V DDR-II Switch With Charge Pump and Precharged Outputs
1
1 Features
1
Supports SSTL_18 Signaling Levels
Suitable for DDR-II Applications
D-Port Outputs are Precharged by Bias Voltage
(VBIAS)
Internal Termination for Control Inputs
High Bandwidth (400 MHz Minimum)
Low and Flat ON-State Resistance (ron)
Characteristics, (ron = 17 Ω Maximum)
Internal 400-
Ω Pulldown Resistors
Low Differential and Rising or Falling Edge Skew
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
2 Applications
ATCA Solutions
Automated External Defibrillators
Adaptive Lighting
Blood Gas Analyzers: Portable
Bluetooth Headsets
CT Scanners
Cameras: Surveillance Analog
Chemical and Gas Sensors
DLP 3D Machine Vision and Optical Networking
3 Description
The SN74CBTU4411 device is a high-bandwidth,
SSTL_18 compatible FET multiplexer/demultiplexer
with low ON-state resistance (ron). The device uses
an internal charge pump to elevate the gate voltage
of the pass transistor, providing a low and flat ron. The
low and flat ron allows for minimal propagation delay
and supports rail-to-rail signaling on data input/output
(I/O) ports. The device also features very low data I/O
capacitance to minimize capacitive loading and signal
distortion on the data bus. Matched ron and I/O
capacitance among channels results in extremely low
differential and rising or falling edge skew. This
allows the device to show optimal performance in
DDR-II applications.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE
SN74CBTU4411ZST
NFBGA (72)
7.00 mm × 7.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic, Each FET Switch (SW1)
A.
Applicable for ports H0 through H9
B.
Applicable for ports D0 through D9
C.
r3 + ron (M3) = 400 Ω typical.
D.
EN is the internal enable signal applied to
the switch.
Simplified Schematic, Each FET Switch (SW2)
A.
EN_DQS1, EN_DQS2, EN1, and EN2 are
the internal enable signals applied to the
switch.
B.
r4 + ron (M4) = 1 kΩ typical.
C.
r5 + ron (M5) = 400 Ω typical.
D.
r6 + ron (M6) = 2.3 kΩ typical.


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