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HCS65R380T Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HCS65R380T Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 7 page Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 04 8 12 16 20 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V Note : I D = 11A Q G, Total Gate Charge [nC] 0 3 6 9 12 15 18 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V GS = 20V V GS = 10V Note : T J = 25 oC I D, Drain Current [A] 0.1 1 10 100 10 0 10 1 10 2 10 3 10 4 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C iss C oss V DS, Drain-Source Voltage [V] 0.0 0.4 0.8 1.2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 25 oC * Notes : 1. V GS= 0V 2. 300us Pulse Test V SD, Source-Drain Voltage [V] 150 oC |
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