HCS70R950T datasheet(3/7 Pages) SEMIHOW

Part #	HCS70R950T

Description	Extremely low switching loss

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

036

9

12

0

2

4

6

8

10

12

V

DS = 350V

V

DS = 140V

V

DS = 560V

Note : I

D = 4.5A

Q

G, Total Gate Charge [nC]

036

9

12

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS = 20V

V

GS = 10V

Note : T

J = 25

oC

I

D, Drain Current [A]

0.1

1

10

100

10

0

10

1

10

2

10

3

10

4

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

iss

C

oss

V

DS, Drain-Source Voltage [V]

2468

10

0

2

4

6

8

10

-55

oC

25

oC

* Notes :

1. V

DS= 10V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

150

oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

150

oC

0

5

10

15

20

25

0

2

4

6

8

10

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

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