HCS60R150T datasheet(1/7 Pages) SEMIHOW

Part #	HCS60R150T

Description	Extremely low switching loss

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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Very Low FOM (R

DS(on) XQg)

Extremely low switching loss

Excellent stability and uniformity

100% Avalanche Tested

TO-220F

Parameter

Value

Unit

BVDSS @Tj,max

650

V

ID

22

A

RDS(on), max

0.15

Qg,Typ

41

nC

Key Parameters

Package & Internal Circuit

HCS60R150T

600V N-Channel Super Junction MOSFET

Features

Application

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Power Factor Correction (PFC)

TV power & LED Lighting Power

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

3.6

/W

R

JA

Junction-to-Ambient

--

62.5

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

600

V

GS

Gate-Source Voltage

30

V

I

D

Drain Current

– Continuous (T

C = 25

)

22.0 *

A

Drain Current

– Continuous (T

C = 100

)

13.9 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

60.0 *

A

E

AS

Single Pulsed Avalanche Energy

(Note 2)

650

mJ

P

D

Power Dissipation (T

C = 25

)

34.5

W

T

J, TSTG

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

260

Absolute Maximum Ratings

T

C=25

unless otherwise specified

Jan 2016

D

G

S

* Drain current limited by maximum junction temperature

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