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BC847C Datasheet(PDF) 1 Page - Olitech Electronics Co.Ltd |
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BC847C Datasheet(HTML) 1 Page - Olitech Electronics Co.Ltd |
1 / 3 page Page:P3-P1 Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Marking BC846A BC846B BC847A BC847B 1A 1B 1E 1F BC847C BC848A BC848B BC848C 1G 1J 1K 1L MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage BC846 V CBO 80 V BC847 V CBO 50 BC848 V CBO 30 Collector-Emitter Voltage BC846 V CEO 65 V BC847 V CEO 45 BC848 V CEO 30 Emitter-Base Voltage V EBO 6 V Collector Current -Continuous I C -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature T J 150 Storage Temperature Tstg -55 to +150 (NPN) (NPN) (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO BC846A/B BC847A/B/C BC848A/B/C Email: info@olitech-elec.com Website: www.olitech-elec.com OLITECH ELECTRONICS CO. LTD. |
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