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US1G Datasheet(PDF) 2 Page - Diotec Semiconductor |
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US1G Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 1)I F = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A 2) Mounted on P.C. board with 25 mm2 copper pads at each terminal Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluß 141 28.02.2002 US 1A ... US 1M Characteristics Kennwerte Type Typ Reverse recovery time Sperrverzugszeit t rr [ns] 1) Forward voltage Durchlaßspannung V F [V] at / bei I F [A] US 1A ... US 1G < 50 < 1.0 1 US 1J ... US 1M < 75 < 1.7 1 Leakage current T j = 25 /CV R = VRRM I R < 10 :A Sperrstrom T j = 100 /CV R = VRRM I R < 100 :A Thermal resistance junction to ambient air R thA < 70 K/W 2) Wärmewiderstand Sperrschicht – umgebende Luft Thermal resistance junction to terminal R thT < 30 K/W Wärmewiderstand Sperrschicht – Anschluß |
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