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MMBT5551 Datasheet(PDF) 1 Page - Nanjing International Group Co |
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MMBT5551 Datasheet(HTML) 1 Page - Nanjing International Group Co |
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1 / 2 page  SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching MARKING: G1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R JA Thermal Resistance From Junction To Ambient 416 /W Tj Junction Temperature 150 Tstg Storage Temperature -55 +150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO * IC=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=120V, IE=0 50 nA Emitter cut-off current IEBO VEB=4V, IC=0 50 nA hFE(1) * VCE=5V, IC=1mA 80 hFE(2) * VCE=5V, IC=10mA 100 300 DC current gain hFE(3) * VCE=5V, IC=50mA 50 VCE(sat)1 * IC=10mA, IB=1mA 0.15 V Collector-emitter saturation voltage VCE(sat)2 * IC=50mA, IB=5mA 0.2 V VBE(sat)1 * IC=10mA, IB=1mA 1 V Base-emitter saturation voltage VBE(sat)2 * IC=50mA, IB=5mA 1 V Transition frequency fT VCE=10V,IC=10mA, f=100MHz 100 300 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF *Pulse test: pulse width 300 s, duty cycle 2.0%. CLASSIFICATION OF hFE (2) RANK L H RANGE 100-200 200-300 SOT 23 1. BASE 2. EMITTER 3. COLLECTOR DONGGUAN NANJING ELECTRONICS LTD., |
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Similar Description - MMBT5551 |
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