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AG3M Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # AG3M
Description  Silicon Rectifier Cells with polysiloxan passivation
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

AG3M Datasheet(HTML) 1 Page - Diotec Semiconductor

  AG3M Datasheet HTML 1Page - Diotec Semiconductor  
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1) Max. temperature of the terminals T
T = 100
/C – Max. Temperatur der Kontaktflächen T
T = 100
/C
398
28.02.2002
AG 3A … AG3M
Silicon Rectifier Cells
Silizium-Gleichrichterzellen
with polysiloxan passivation
mit Polysiloxan-Passivierung
Nominal current – Nennstrom
3 A
Repetitive peak reverse voltage
50…1000 V
Periodische Spitzensperrspannung
Weight approx. – Gewicht ca.
0.3 g
Dimensions / Maße in mm
Standard packaging bulk
Standard Lieferform lose
Maximum ratings and Characteristics
Kenn- und Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM [V]
AG 3A
50
80
AG 3B
100
130
AG 3D
200
250
AG 3G
400
450
AG 3J
600
700
AG 3K
800
1000
AG 3M
1000
1300
Max. average forward rectified current, R-load
T
T = 100
/CI
FAV
3 A 1)
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
f > 15 Hz
I
FRM
30 A 1)
Periodischer Spitzenstrom
Peak forward surge current, 50 Hz half sine-wave
T
A = 25
/CI
FSM
150 A
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing – Grenzlastintegral, t < 10 ms
T
A = 25
/Ci2t
110 A2s
Operating junction temperature – Sperrschichttemperatur
T
j
– 50...+150
/C
Storage temperature – Lagerungstemperatur
T
S
– 50...+150
/C
Forward voltage
T
j = 25
/CI
F = 3 A
V
F
< 1.2 V
Durchlaßspannung
Leakage current – Sperrstrom
T
j = 25
/CV
R = VRRM
I
R
< 10
:A


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