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BC807-40W Datasheet(PDF) 2 Page - Diotec Semiconductor

Part # BC807-40W
Description  Surface mount Si-Epitaxial PlanarTransistors
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC807-40W Datasheet(HTML) 2 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
5
01.11.2003
General Purpose Transistors
BC 807W / BC 808W
Characteristics, T
j = 25
/C
Kennwerte, T
j = 25
/C
Min.
Typ.
Max.
Collector saturation voltage – Kollektor-Sättigungsspg.
- I
C = 500 mA, - IB = 50 mA
- V
CEsat
0.7 V
Base saturation voltage – Basis-Sättigungsspannung
- I
C = 500 mA, - IB = 50 mA
- V
BEsat
1.3 V
Base-Emitter voltage – Basis-Emitter-Spannung
- V
CE = 1 V, - IC = 500 mA
- V
BE
1.2 V
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, - VCB = 20 V
- I
CB0
100 nA
I
E = 0, - VCB = 20 V, Tj = 150
/C- I
CB0
––
5
:A
Emitter-Base cutoff current – Emitterreststrom
I
C = 0, - VEB = 4 V
- I
EB0
100 nA
Gain-Bandwidth Product – Transitfrequenz
- V
CE = 5 V, - IC = 10 mA, f = 50 MHz
f
T
80 MHz
100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
10 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
R
thA
620 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC 817W / BC 818W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom
verstärkungsgruppen pro Typ
BC 807-16W = 5A
BC 807-25W = 5B
BC 807-40W = 5C
BC 807W = 5D
BC 808-16W = 5E
BC 808-25W = 5F
BC 808-40W = 5G
BC 808W = 5H


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