BC847S datasheet(2/2 Pages) DIOTEC

Part #	BC847S

Description	Surface mount Si-Epitaxial PlanarTransistors

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Manufacturer	DIOTEC [Diotec Semiconductor]

Direct Link	http://www.diotec.com

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1) Tested with pulses t

p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2 Kupferbelag (Lötpad) an jedem Anschluß

13

1

2

3

4

65

T1

T2

General Purpose Transistors

BC846S ... BC848S

Characteristics (T

j = 25/C)

Kennwerte (T

j = 25/C)

Min.

Typ.

Max.

Collector saturation volt. – Kollektor-Sättigungsspg.

1)

I

C = 10 mA, IB = 0.5 mA

I

C = 100 mA, IB = 5 mA

V

CEsat

V

CEsat

–

90 mV

200 mV

250 mV

600 mV

Base saturation voltage – Basis-Sättigungsspannung

1)

I

C = 10 mA, IB = 0.5 mA

I

C = 100 mA, IB = 5 mA

V

BEsat

V

BEsat

–

700 mV

900 mV

–

Base-Emitter voltage – Basis-Emitter-Spannung

1)

V

CE = 5 V, IC = 2 mA

V

CE = 5 V, IC = 10 mA

V

BEon

V

BEon

580 mV

–

660 mV

–

700 mV

770 mV

Collector-Base cutoff current – Kollektorreststrom

I

E = 0, VCB = 30 V

I

E = 0, VCB = 30 V, Tj = 150/C

I

CB0

I

CB0

–

15 nA

5

:A

Emitter-Base cutoff current – Emitterreststrom

I

C = 0, VEB = 5 V

I

EB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

V

CE = 5 V, IC = 10 mA, f = 100 MHz

f

T

100 MHz

–

Collector-Base Capacit. – Kollektor-Basis-Kapazität

V

CB = 10 V, IE = ie = 0, f = 1 MHz

C

CB0

–

3.5 pF

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

V

EB = 0.5 V, IC = ic = 0, f = 1 MHz

C

EB0

–

9 pF

–

Noise figure – Rauschzahl

V

CE = 5 V, IC = 200 :A

R

G = 2 kS, f = 1 kHz, )f = 200 Hz

F

–

2 dB

10 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

420 K/W

2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC856S ... BC858S

Pinning – Anschlußbelegung

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