15

01.11.2003

General Purpose Transistors

BC 856 ... BC 860

Characteristics (T

Kennwerte (T

Min.

Typ.

Max.

- I

-V

CEsat

–

90 mV

250 mV

- I

-V

CEsat

–

200 mV

600 mV

- I

- V

BEsat

–

700 mV

–

- I

- V

BEsat

–

900 mV

–

- V

- V

BEon

600 mV

650 mV

750 mV

- V

- V

BEon

–

–

820 mV

Collector-Base cutoff current – Kollektorreststrom

I

- I

CB0

–

–

15 nA

I

CB0

––

5

Emitter-Base cutoff current – Emitterreststrom

I

- I

EB0

–

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- V

f

T

100 MHz

–

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

C

CB0

–

–

6 pF

Noise figure – Rauschzahl

- V

R

BC 856...

BC 858

F

–

2 dB

10 dB

BC 859/860

F

–

1 dB

4 dB

- V

R

BC 859

F

–

1.2 dB

4 dB

BC 860

F

–

1.2 dB

4 dB

Equivalent noise voltage – Äquivalente Rauschspannung

- V

R

BC 860

u

F

–

–

0.11

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BC 846 ... BC 850

Marking of available current gain

groups per type

Stempelung der lieferbaren Strom-

verstärkungsgruppen pro Typ

BC 856A = 3A

BC 856B = 3B

BC 857A = 3E

BC 857B = 3F

BC 857C = 3G

BC 858A = 3J

BC 858B = 3K

BC 858C = 3L

BC 859B = 4B

BC 859C = 4C

BC 860B = 4F

BC 860C = 4G