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BSP32 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BSP32 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 2 01.11.2003 4 3 2 1 3 ±0.1 6.5 ±0.2 0.7 3.25 2.3 1.65 BSP 30 ... BSP 33 Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 W Plastic case SOT-223 Kunststoffgehäuse Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BSP 30 BSP 31 BSP 32 BSP 33 Collector-Emitter-voltage B open - V CE0 60 V 80 V Collector-Base-voltage E open - V CB0 70 V 90 V Emitter-Base-voltage C open - V EB0 5 V Power dissipation – Verlustleistung P tot 1.3 W 1) Collector current – Kollektorstrom (dc) - I C 1 A Peak Collector current – Koll.-Spitzenstrom - I CM 2 A Peak Base current – Basis-Spitzenstrom - I BM 200 mA Junction temp. – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, - VCB = 60 V - I CB0 – – 100 nA I E = 0, - VCB = 60 V, Tj = 150 /C- I CB0 – – 50 :A Emitter-Base cutoff current – Emitterreststrom I C = 0, - VEB = 5 V - I EB0 – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 2) - I C = 150 mA, - IB = 15 mA - V CEsat – – 250 mV - I C = 500 mA, - IB = 50 mA - V CEsat – – 500 mV |
Similar Part No. - BSP32 |
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Similar Description - BSP32 |
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