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HDBL104G Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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HDBL104G Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page HDBL101G - HDBL107G CREAT BY ART - Glass passivated junction - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326854 - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A I 2t A 2s trr ns TJ °C TSTG °C Document Number: DS_D1311010 Version: F15 TJ=25°C TJ=125°C Rating for fusing (t<8.3ms) 10.3 Storage temperature range - 55 to + 150 Note 1: Pulse Test with PW=300μs,1% Duty Cycle Notes 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Typical thermal resistance RθJL RθJA 15 40 °C/W Operating junction temperature range - 55 to + 150 IR 5 500 μA Maximum reverse recovery time (Note 2) 50 75 Maximum reverse current @ rated VR Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Maximum instantaneous forward voltage (Note 1) IF= 1 A VF 1.0 1.3 1.7 V HDBL 107G UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 Weight: 0.36 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL HDBL 101G HDBL 102G HDBL 103G HDBL 104G HDBL 105G HDBL 106G DBL MECHANICAL DATA Case: Molded plastic body Polarity: Polarity as marked on the body Taiwan Semiconductor 1A, 50V - 1000V Glass Passivated High Efficient Bridge Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC |
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