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S1K-K Datasheet(PDF) 1 Page - Taiwan Memory Technology

Part # S1K-K
Description  1A, 200V - 1000V Surface Mount Rectifiers
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

S1K-K Datasheet(HTML) 1 Page - Taiwan Memory Technology

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CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
S1D
S1G
S1J
S1K
S1M
VRRM
200
400
600
800
1000
V
VRMS
140
280
420
560
700
V
VDC
200
400
600
800
1000
V
IF(AV)
A
trr
μs
CJ
pF
TJ
°C
TSTG
°C
Version: B1603
Case:
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Polarity:
Indicated by cathode band
S1G
-K
A
Maximum RMS voltage
Weight:
0.06 g (approximately)
Maximum average forward rectified current
1
S1D-K - S1M-K
1A, 200V - 1000V Surface Mount Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
S1K
-K
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
S1M
-K
UNIT
DO-214AC (SMA)
Taiwan Semiconductor
1.1
1
SYMBOL
S1D
-K
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
TJ=25°C
S1J
-K
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
°C/W
V
IR
μA
Maximum reverse current @ rated VR
12
30
TJ=125°C
Maximum repetitive peak reverse voltage
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse test with PW=300μs, 1% duty cycle
Storage temperature range
- 55 to +175
Marking code
- 55 to +175
50
Maximum DC blocking voltage
Typical reverse recovery time (Note 2)
Operating junction temperature range
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Typical thermal resistance
RθJL
RθJA
Typical junction capacitance (Note 3)
1.5
30
85


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