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S1K-K Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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S1K-K Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test S1D S1G S1J S1K S1M VRRM 200 400 600 800 1000 V VRMS 140 280 420 560 700 V VDC 200 400 600 800 1000 V IF(AV) A trr μs CJ pF TJ °C TSTG °C Version: B1603 Case: DO-214AC (SMA) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER Polarity: Indicated by cathode band S1G -K A Maximum RMS voltage Weight: 0.06 g (approximately) Maximum average forward rectified current 1 S1D-K - S1M-K 1A, 200V - 1000V Surface Mount Rectifiers FEATURES Moisture sensitivity level: level 1, per J-STD-020 S1K -K - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA S1M -K UNIT DO-214AC (SMA) Taiwan Semiconductor 1.1 1 SYMBOL S1D -K Maximum instantaneous forward voltage (Note 1) @ 1 A VF TJ=25°C S1J -K Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM °C/W V IR μA Maximum reverse current @ rated VR 12 30 TJ=125°C Maximum repetitive peak reverse voltage Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 1: Pulse test with PW=300μs, 1% duty cycle Storage temperature range - 55 to +175 Marking code - 55 to +175 50 Maximum DC blocking voltage Typical reverse recovery time (Note 2) Operating junction temperature range Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Typical thermal resistance RθJL RθJA Typical junction capacitance (Note 3) 1.5 30 85 |
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