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S2JA Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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S2JA Datasheet(HTML) 1 Page - Taiwan Memory Technology |
1 / 4 page CREAT BY ART - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A trr μs CJ pF TJ °C TSTG °C Document Number: DS_D1410015 Version: J15 Maximum reverse current @ rated VR TJ=25°C TJ=125°C Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 50 16 53 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Typical thermal resistance RθJL RθJA °C/W Typical reverse recovery time (Note 2) 1.5 Typical junction capacitance (Note 3) 30 A Maximum instantaneous forward voltage (Note 1) @ 1.5 A VF 1.1 V IR 5 μA 125 S2 DA S2 GA Maximum DC blocking voltage Maximum average forward rectified current 1.5 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM S2 JA S2 KA S2 MA Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage PARAMETER SYMBOL S2 AA S2 BA S2AA - S2MA Taiwan Semiconductor 2A, 50V - 1000V Surface Mount Rectifiers FEATURES Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) |
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