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FQD60N03L Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQD60N03L Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2004 Fairchild Semiconductor Corporation FQD60N03L Rev. B1 Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics (V GS = 4.5V) Switching Characteristics (V GS = 10V) Unclamped Inductive Switching Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 25V - - 1 µA VGS = 0V TC = 125 oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1 - 3 V rDS(ON) Drain to Source On Resistance ID = 30A, VGS = 10V - 0.014 0.023 Ω ID = 19A, VGS = 4.5V - 0.024 0.030 CISS Input Capacitance VDS = 15V, V GS = 0V, f = 1MHz - 900 - pF COSS Output Capacitance - 210 - pF CRSS Reverse Transfer Capacitance - 90 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 19A Ig = 1.0mA - 18 28 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 9.6 14 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.0 1.5 nC Qgs Gate to Source Gate Charge - 3.4 - nC Qgd Gate to Drain “Miller” Charge - 3.4 - nC tON Turn-On Time VDD = 15V, ID = 7.9A VGS = 4. 5V, RGS = 18 Ω - - 90 ns td(ON) Turn-On Delay Time - 11 - ns tr Rise Time - 49 - ns td(OFF) Turn-Off Delay Time - 27 - ns tf Fall Time - 28 - ns tOFF Turn-Off Time - - 83 ns tON Turn-On Time VDD = 15V, ID = 7.9A VGS = 10 V, RGS = 18 Ω - - 48 ns td(ON) Turn-On Delay Time - 6 - ns tr Rise Time - 26 - ns td(OFF) Turn-Off Delay Time - 52 - ns tf Fall Time - 28 - ns tOFF Turn-Off Time - - 120 ns tAV Avalanche Time ID = 2.7 A, 3.0 mH 180 - - µs VSD Source to Drain Diode Voltage ISD = 19A - - 1.25 V ISD = 10A - - 1.0 V trr Reverse Recovery Time ISD = 19A, dISD /dt = 100A/µs - - 58 ns QRR Reverse Recovered Charge ISD = 19A, dISD /dt = 100A/µs - - 70 nC |
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