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CY7C1351 Datasheet(PDF) 4 Page - Cypress Semiconductor

Part # CY7C1351
Description  4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1351 Datasheet(HTML) 4 Page - Cypress Semiconductor

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CY7C1351F
Document #: 38-05210 Rev. *B
Page 4 of 15
CE3
92
B6
Input-
Synchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge
of CLK. Used in conjunction with CE1 andCE2 to select/deselect
the device.
OE
86
F4
Input-
Asynchronous
Output Enable, asynchronous input, active LOW. Combined
with the synchronous logic block inside the device to control the
direction of the I/O pins. When LOW, the I/O pins are allowed
to behave as outputs. When deasserted HIGH, I/O pins are
three-stated, and act as input data pins. OE is masked during
the data portion of a write sequence, during the first clock when
emerging from a deselected state, when the device has been
deselected.
CEN
87
M4
Input-
Synchronous
Clock Enable Input, active LOW. When asserted LOW the
Clock signal is recognized by the SRAM. When deasserted
HIGH the Clock signal is masked. Since deasserting CEN does
not deselect the device, CEN can be used to extend the previ-
ous cycle when required.
ZZ
64
T7
Input-
Asynchronous
ZZ “sleep” Input. This active HIGH input places the device in
a non-time critical “sleep” condition with data integrity pre-
served. During normal operation, this pin can be connected to
Vss or left floating.
DQs
52,53,56,57,58,
59,62,63,68,69,
72,73,74,75,78,
79,2,3,6,7,8,9,
12,13,18,19,22,
23,24,25,28,29
K6,L6,M6,N6,
K7,L7,N7,P7,
E6,F6,G6,H6,
D7,E7,G7,H7,
D1,E1,G1,H1,
E2,F2,G2,H2,
K1,L1,N1,P1,
K2,L2,M2,N2
I/O-
Synchronous
Bidirectional Data I/O Lines. As inputs, they feed into an
on-chip data register that is triggered by the rising edge of CLK.
As outputs, they deliver the data contained in the memory loca-
tion specified by address during the clock rise of the read cycle.
The direction of the pins is controlled by OE and the internal
control logic. When OE is asserted LOW, the pins can behave
as outputs. When HIGH, DQs and DQP[A:D] are placed in a
three-state condition. The outputs are automatically three-stat-
ed during the data portion of a write sequence, during the first
clock when emerging from a deselected state, and when the
device is deselected, regardless of the state of OE.
DQP[A:D]
51,80,1,30
P6,D6,D2,P2
I/O-
Synchronous
Bidirectional Data Parity I/O Lines. Functionally, these signals
are identical to DQs. During write sequences, DQP[A:D] is con-
trolled by BW[A:D] correspondingly.
MODE
31
R3
Input
Strap Pin
Mode Input. Selects the burst order of the device.
When tied to Gnd selects linear burst sequence. When tied to
VDD or left floating selects interleaved burst sequence.
VDD
15,41,65,91
J2,C4,J4,R4,
J6
Power Supply Power supply inputs to the core of the device.
VDDQ
4,11,20,27,54,
61,70,77
A1,F1,J1,M1,
U1,A7,F7,J7,
M7,U7
I/O Power Sup-
ply
Power supply for the I/O circuitry.
VSS
5,10,17,21,26,
40,55,60,67,71,
76,90,
D3,E3,F3,H3,
J3,K3,M3,N3,
P3,D5,E5,F5,
H5,J5,K5,M5,
N5,P5
Ground
Ground for the device.
NC
14,16,38,39,42,
43,66,83,84
B1,C1,R1,T1,
T2,U2,U3,A4,
D4,G4,L4,U4,
U5,T6,U6,B7,
C7,R5,R7,T7
No Connects. Not Internally connected to the die.
Pin Definitions
Name
TQFP
BGA
I/O
Description


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