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KA5H0380R Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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KA5H0380R Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 14 page KA5H0380R/KA5M0380R/KA5L0380R 3 Electrical Characteristics (SFET part) (Ta = 25 °C unless otherwise specified) Note: Pulse test: Pulse width < 300 µS, duty < 2% Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50 µA 800 −− V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V −− 250 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C −− 1000 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 45 Ω Forward transconductance (note) gfs VDS=50V, ID=0.5A 1.5 2.5 − S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz − 779 − pF Output capacitance Coss − 75.6 − Reverse transfer capacitance Crss − 24.9 − Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) − 40 − nS Rise time tr − 95 − Turn off delay time td(off) − 150 − Fall time tf − 60 − Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) −− 34 nC Gate-source charge Qgs − 7.2 − Gate-drain (Miller) charge Qgd − 12.1 − S 1 R ---- = |
Similar Part No. - KA5H0380R |
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Similar Description - KA5H0380R |
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