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KA5M0380R-TU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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KA5M0380R-TU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 14 page KA5H0380R/KA5M0380R/KA5L0380R 2 Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25 °C 4. L=13 µH, starting Tj=25°C Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 800 V Drain-Gate voltage (RGS=1M Ω) VDGR 800 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 12 ADC Single pulsed avalanche energy (3) EAS 95 mJ Avalanche current (4) IAS 10 A Continuous drain current (TC=25 °C) ID 3.0 ADC Continuous drain current (TC=100 °C) ID 2.1 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V Total power dissipation PD (watt H/S) 35 W Derating 0.28 W/ °C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C |
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Similar Description - KA5M0380R-TU |
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