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UNR2214 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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UNR2214 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 17 page Transistors with built-in Resistor 1 Publication date: December 2003 SJH00010CED UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing ■ Resistance by Part Number Marking Symbol (R1)(R2) • UNR2210 (UN2210) 8L 47 k Ω • UNR2211 (UN2211) 8A 10 k Ω 10 k Ω • UNR2212 (UN2212) 8B 22 k Ω 22 k Ω • UNR2213 (UN2213) 8C 47 k Ω 47 k Ω • UNR2214 (UN2214) 8D 10 k Ω 47 k Ω • UNR2215 (UN2215) 8E 10 k Ω • UNR2216 (UN2216) 8F 4.7 k Ω • UNR2217 (UN2217) 8H 22 k Ω • UNR2218 (UN2218) 8I 0.51 k Ω 5.1 k Ω • UNR2219 (UN2219) 8K 1 k Ω 10 k Ω • UNR221D (UN221D) 8M 47 k Ω 10 k Ω • UNR221E (UN221E) 8N 47 k Ω 22 k Ω • UNR221F (UN221F) 8O 4.7 k Ω 10 k Ω • UNR221K (UN221K) 8P 10 k Ω 4.7 k Ω • UNR221L (UN221L) 8Q 4.7 k Ω 4.7 k Ω • UNR221M (UN221M) EL 2.2 k Ω 47 k Ω • UNR221N (UN221N) EX 4.7 k Ω 47 k Ω • UNR221T (UN221T) EZ 22 k Ω 47 k Ω • UNR221V (UN221V) FD 2.2 k Ω 2.2 k Ω • UNR221Z (UN221Z) FF 4.7 k Ω 22 k Ω ■ Absolute Maximum Ratings T a = 25°C B R1 R2 C E Internal Connection Unit: mm 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package 0.40 +0.10 –0.05 2 1 3 (0.95) (0.95) 1.9±0.1 2.90 +0.20 –0.05 0.16 +0.10 –0.06 10˚ Note) The part numbers in the parenthesis show conventional part number. Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C |
Similar Part No. - UNR2214 |
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Similar Description - UNR2214 |
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