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UCC27323D Datasheet(PDF) 6 Page - Texas Instruments

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Part # UCC27323D
Description  DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

UCC27323D Datasheet(HTML) 6 Page - Texas Instruments

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UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002
6
www.ti.com
APPLICATION INFORMATION
input stage
The inputs of UCC37323/4/5 family of drivers are designed to withstand 500-mA reverse current without either
damage to the IC for logic upset. The input stage of each driver should be driven by a signal with a short rise
or fall time. This condition is satisfied in typical power supply applications, where the input signals are provided
by a PWM controller or logic gates with fast transition times (<200 ns). The input stages to the drivers function
as a digital gate, and they are not intended for applications where a slow changing input voltage is used to
generate a switching output when the logic threshold of the input section is reached. While this may not be
harmful to the driver, the output of the driver may switch repeatedly at a high frequency.
Users should not attempt to shape the input signals to the driver in an attempt to slow down (or delay) the signal
at the output. If limiting the rise or fall times to the power device is desired, limit the rise or fall times to the power
device, then an external resistance can be added between the output of the driver and the load device, which
is generally a power MOSFET gate. The external resistor may also help remove power dissipation from the IC
package, as discussed in the section on Thermal Considerations.
output stage
Inverting outputs of the UCC37323 and OUTA of the UCC37325 are intended to drive external P-channel
MOSFETs. Noninverting outputs of the UCC37324 and OUTB of the UCC37325 are intended to drive external
N-channel MOSFETs.
Each output stage is capable of supplying
±4-A peak current pulses and swings to both VDD and GND. The
pullup/ pulldown circuits of the driver are constructed of bipolar and MOSFET transistors in parallel. The peak
output current rating is the combined current from the bipolar and MOSFET transistors. The output resistance
is the RDS(on) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage
of the bipolar transistor. Each output stage also provides a very low impedance to overshoot and undershoot
due to the body diode of the external MOSFET. This means that in many cases, external-schottky-clamp diodes
are not required.
The UCC37323 family delivers 4-A of gate drive where it is most needed during the MOSFET switching
transition – at the Miller plateau region – providing improved efficiency gains. A unique BiPolar and MOSFET
hybrid output stage in parallel also allows efficient current sourcing at low supply voltages.


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