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VQ3001P Datasheet(PDF) 4 Page - Vishay Siliconix

Part # VQ3001P
Description  Dual N-/Dual P-Channel 30-V (D-S) MOSFETs
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VQ3001P Datasheet(HTML) 4 Page - Vishay Siliconix

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VQ3001J/P
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70221
S-04279—Rev. D, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
N-CHANNEL
0.1
1
10
100
10
1
VDD = 25 V
RG = 25
W
VGS = 0 to 10 V
td(on)
Threshold Region
Capacitance
Gate Charge
Load Condition Effects on Switching
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Qg – Total Gate Charge (pC)
td(off)
tr
tf
10
1
0.6
0.8
2.0
1.0
1.2
1.4
1.6
1.8
–55
_C
0.1
0.01
100
_C
25
_C
TJ = 150
_C
120
100
80
0
010
50
60
40
20
30
40
20
6
5
4
0
0
80
400
3
2
160
240
320
1
24 V
10
50
100
100
10
1
VDD = 25 V
RL = 24
W
VGS = 0 to 10 V
ID = 1 A
500
400
300
0
0
100
500
200
100
200
300
400
150
_C
25
_C
TJ = –55
_C
ID – Drain Current (mA)
Transconductance
Drive Resistance Effects on Switching
td(on)
td(off)
tr
tf
ID = 1 A
RG – Gate Resistance (
W)
VDS = 7.5 V
300
ms, 1% Duty Cycle
Pulse Test
VDS = 10 V
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS = 15 V


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