UNR221x Series

2

SJH00010CED

■ Electrical Characteristics T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

= 50 V, I

E

= 0

0.1

µA

Collector-emitter cutoff current (Base open)

0.5

µA

Emitter-base

UNR2210/2215/2216/2217

0.01

mA

cutoff current UNR2213

0.1

(Collector open) UNR2212/2214/221D/

0.2

221E/221M/221N/221T

UNR221Z

0.4

UNR2211

0.5

UNR221F/221K

1.0

UNR2219

1.5

UNR2218/221L/221V

2.0

Forward current

UNR221V

= 10 V, I

C

= 5 mA

6

20



transfer ratio

UNR2218/221K/221L

20

UNR2219/221D/221F

30

UNR2211

35

UNR2212/221E

60

UNR221Z

60

200

UNR2213/2214/221M

80

UNR221N/221T

80

400

160

460

Collector-emitter saturation voltage

= 10 mA, I

B

= 0.3 mA

0.25

V

UNR221V

Output voltage high-level

4.9

V

Output voltage low-level

= 5 V, V

B

= 2.5 V, R

L

= 1 kΩ

0.2

V

UNR2213/221K

UNR221D

UNR221E

= 5 V, V

B

= 6 V, R

L

= 1 kΩ

Transition frequency

150

MHz

Input resistance

UNR2218

−30%

0.51

+30%

k

Ω

UNR2219

1.0

UNR221M/211V

2.2

UNR2216/221F/221L/

4.7

221N/221Z

UNR2211/2214/2215/221K

10

UNR2212/2217/221T

22

UNR2210/2213/221D/221E

47

Rank

Q

R

S

No-rank

160 to 260

210 to 340

290 to 460

160 to 460

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification