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AN-983 Datasheet(PDF) 11 Page - International Rectifier

Part # AN-983
Description  Application Note
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

AN-983 Datasheet(HTML) 11 Page - International Rectifier

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AN-983
July 2012
11 
term reliability is impaired. How close to this temperature the device can be operated in an actual application
depends on the reliability requirements of the application. Many of the new introductions are rated at 175°C,
rather than the traditional 150°C. This means that the designer can achieve the same reliability performance
with a higher junction temperature.
8.2. Thermal Resistance
Rthjc, Rthcs, Rthja are needed for the thermal design, as explained in AN-1057 and AN-949.
8.3. Electrical Characteristics
The purpose of this section is to provide a detailed characterization of the device so that the designer can
predict with accuracy its behavior in a specific application.
Collector-to-Emitter Breakdown Voltage (BVCES). This parameter guarantees the lower limit of the distribu-
tion in breakdown voltage. Breakdown is defined in terms of a specific leakage current and has a positive
temperature coefficient (listed in the table as BVCES/∆T). This implies that the a device with 600V breakdown
at 25°C would have a lower breakdown voltage at -55°C.
Recent data sheets show the test circuit used to measure this parameter.
Collector-to-Emitter Saturation Voltage (VCE(on)). This is the main parameter to calculate conduction losses
and is complemented by figures that provide a detailed characterization in temperature, current and gate volt-
age.
Gate Threshold Voltage (VGE(th)). This is the gate voltage that initiates the flow of collector current. The varia-
tion in gate threshold with temperature is also specified (
VGE(th) / ∆Tj). Typically the coefficient is -10 to -20
mV/°C, leading to a reduction of about 1-2 V in the threshold voltage at high temperature.
Forward Transconductance (gFE). This parameter is measured by superimposing a small variation on a
gate bias that takes the IGBT to a high level of current in "linear" mode. This parameters is highly non-linear,
increasing significantly with current.
Zero-Gate-Voltage Collector Current (ICES). This parameter guarantees the upper limit of the leakage distri-
bution at the rated voltage and two temperatures. It complements the BVCES rating seen above.
8.4. Switching Characteristics
Gate Charge Parameters (Qg, Qge, Qgc). Gate charge values of an IGBT are useful to size the gate drive cir-
cuit and to estimate gate drive losses. Unfortunately they cannot be used to predict switching times, as in the


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