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AN-983 Datasheet(PDF) 11 Page - International Rectifier |
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AN-983 Datasheet(HTML) 11 Page - International Rectifier |
11 / 16 page www.irf.com AN-983 July 2012 11 term reliability is impaired. How close to this temperature the device can be operated in an actual application depends on the reliability requirements of the application. Many of the new introductions are rated at 175°C, rather than the traditional 150°C. This means that the designer can achieve the same reliability performance with a higher junction temperature. 8.2. Thermal Resistance Rthjc, Rthcs, Rthja are needed for the thermal design, as explained in AN-1057 and AN-949. 8.3. Electrical Characteristics The purpose of this section is to provide a detailed characterization of the device so that the designer can predict with accuracy its behavior in a specific application. Collector-to-Emitter Breakdown Voltage (BVCES). This parameter guarantees the lower limit of the distribu- tion in breakdown voltage. Breakdown is defined in terms of a specific leakage current and has a positive temperature coefficient (listed in the table as BVCES/∆T). This implies that the a device with 600V breakdown at 25°C would have a lower breakdown voltage at -55°C. Recent data sheets show the test circuit used to measure this parameter. Collector-to-Emitter Saturation Voltage (VCE(on)). This is the main parameter to calculate conduction losses and is complemented by figures that provide a detailed characterization in temperature, current and gate volt- age. Gate Threshold Voltage (VGE(th)). This is the gate voltage that initiates the flow of collector current. The varia- tion in gate threshold with temperature is also specified ( VGE(th) / ∆Tj). Typically the coefficient is -10 to -20 mV/°C, leading to a reduction of about 1-2 V in the threshold voltage at high temperature. Forward Transconductance (gFE). This parameter is measured by superimposing a small variation on a gate bias that takes the IGBT to a high level of current in "linear" mode. This parameters is highly non-linear, increasing significantly with current. Zero-Gate-Voltage Collector Current (ICES). This parameter guarantees the upper limit of the leakage distri- bution at the rated voltage and two temperatures. It complements the BVCES rating seen above. 8.4. Switching Characteristics Gate Charge Parameters (Qg, Qge, Qgc). Gate charge values of an IGBT are useful to size the gate drive cir- cuit and to estimate gate drive losses. Unfortunately they cannot be used to predict switching times, as in the |
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