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IRF6217TRPbF-1 Datasheet(PDF) 2 Page - International Rectifier |
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IRF6217TRPbF-1 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF6217PbF-1 Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 0.55 ––– ––– S VDS = -50V, ID = -0.42A Qg Total Gate Charge ––– 6.0 9.0 ID = -0.42A Qgs Gate-to-Source Charge ––– 1.6 2.4 nC VDS = -120V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -10V, td(on) Turn-On Delay Time ––– 12 ––– VDD = -75V tr Rise Time ––– 7.2 ––– ID = -0.42A td(off) Turn-Off Delay Time ––– 14 ––– RG = 6.2 Ω tf Fall Time ––– 16 ––– VGS = -10V Ciss Input Capacitance ––– 150 ––– VGS = 0V Coss Output Capacitance ––– 30 ––– VDS = -25V Crss Reverse Transfer Capacitance ––– 10 ––– pF ƒ = 1.0KHz Coss Output Capacitance ––– 150 ––– VGS = 0V, VDS = -1.0V, ƒ = 1.0KHz Coss Output Capacitance ––– 15 ––– VGS = 0V, VDS = -120V, ƒ = 1.0KHz Coss eff. Effective Output Capacitance ––– 45 ––– VGS = 0V, VDS = 0V to -120V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 15 mJ IAR Avalanche Current ––– -1.4 A Avalanche Characteristics Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -150 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.4 Ω VGS = -10V, ID = -0.42A VGS(th) Gate Threshold Voltage -3.0 ––– -5.0 V VDS = VGS, ID = -250μA ––– ––– -25 μA VDS = -150V, VGS = 0V, TJ = 25°C ––– ––– -250 VDS = -120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 nA VGS = 20V IGSS IDSS Drain-to-Source Leakage Current Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -0.42A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = -0.42A Qrr Reverse RecoveryCharge ––– 86 130 nC di/dt = -100A/μs Diode Characteristics -1.8 -5.0 A S D G |
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