Transistors with built-in Resistor

1

Publication date: December 2003

SJH00010CED

Silicon NPN epitaxial planar transistor

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package allowing easy automatic insertion through tape

packing and magazine packing

■ Resistance by Part Number

• UNR2210 (UN2210)

8L

47 k

Ω

• UNR2211 (UN2211)

8A

10 k

Ω

10 k

Ω

• UNR2212 (UN2212)

8B

22 k

Ω

22 k

Ω

• UNR2213 (UN2213)

8C

47 k

Ω

47 k

Ω

• UNR2214 (UN2214)

8D

10 k

Ω

47 k

Ω

• UNR2215 (UN2215)

8E

10 k

Ω

• UNR2216 (UN2216)

8F

4.7 k

Ω

• UNR2217 (UN2217)

8H

22 k

Ω

• UNR2218 (UN2218)

8I

0.51 k

Ω

5.1 k

Ω

• UNR2219 (UN2219)

8K

1 k

Ω

10 k

Ω

• UNR221D (UN221D)

8M

47 k

Ω

10 k

Ω

• UNR221E (UN221E)

8N

47 k

Ω

22 k

Ω

• UNR221F (UN221F)

8O

4.7 k

Ω

10 k

Ω

• UNR221K (UN221K)

8P

10 k

Ω

4.7 k

Ω

• UNR221L (UN221L)

8Q

4.7 k

Ω

4.7 k

Ω

• UNR221M (UN221M)

EL

2.2 k

Ω

47 k

Ω

• UNR221N (UN221N)

EX

4.7 k

Ω

47 k

Ω

• UNR221T (UN221T)

EZ

22 k

Ω

47 k

Ω

• UNR221V (UN221V)

FD

2.2 k

Ω

2.2 k

Ω

• UNR221Z (UN221Z)

FF

4.7 k

Ω

22 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

B

C

E

Internal Connection

Unit: mm

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

Note) The part numbers in the parenthesis show conventional part number.

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

50

V

Collector current

100

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C