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DMV1500 Datasheet(PDF) 5 Page - STMicroelectronics |
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DMV1500 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 9 page ® DMV1500M 5/9 1E-3 1E-2 1E-1 1E+0 0.1 0.2 0.5 1.0 tp(s) K=[Zth(j-c)/Rth(j-c)] Single pulse δ = 0.1 δ = 0.2 δ = 0.5 T δ=tp/T tp Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. 1E-3 1E-2 1E-1 1E+0 0 5 10 15 20 25 30 35 40 t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (damper diode). 1E-3 1E-2 1E-1 1E+0 0 5 10 15 20 25 30 t(s) IM(A) Tc=100°C IM t δ=0.5 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (modulation diode). 0.1 0.2 0.5 1.0 2.0 5.0 0 100 200 300 400 500 600 700 800 900 1000 dIF/dt(A/µs) Qrr(nc) IF= 6A 90% confidence Tj=125°C Fig. 6-1: Reverse recovery charges versus dIF/dt (damper diode). 0.1 1.0 10.0 100.0 0 50 100 150 200 dIF/dt(A/µs) Qrr(nC) IF= 3A 90% confidence Tj=125°C Fig. 6-2: Reverse recovery charges versus dIF/dt (modulation diode). 0.1 0.2 0.5 1.0 2.0 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 dIF/dt(A/µs) IRM(A) IF= 6A 90% confidence Tj=125°C Fig. 7-1: Reverse recovery current versus dIF/dt (damper diode). |
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