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HFU2N90 Datasheet(PDF) 1 Page - SemiHow Co.,Ltd. |
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HFU2N90 Datasheet(HTML) 1 Page - SemiHow Co.,Ltd. |
1 / 9 page BV DSS = 900 V R DS(on) typ I D = 2.0 A Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower R DS(ON) GS=10V 100% Avalanche Tested Thermal Resistance Characteristics FEATURES Absolute Maximum Ratings T C=25 unless otherwise specified HFD2N90/HFU2N90 900V N-Channel MOSFET Feb 2014 D-PAK 1.Gate 2. Drain 3. Source I-PAK HFD2N90 HFU2N90 Symbol Parameter Typ. Max. Units R JC Junction-to-Case -- 1.78 R JA Junction-to-Ambient* -- 50 R JA Junction-to-Ambient -- 110 * When mounted on the minimum pad size recommended (PCB Mount) Symbol Parameter Value Units V DSS Drain-Source Voltage 900 V I D Drain Current – Continuous (T C = 25 2.0 A Drain Current – Continuous (T C = 100 1.3 A I DM Drain Current – Pulsed (Note 1) 8.0 A V GS Gate-Source Voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 170 mJ I AR Avalanche Current (Note 1) 2.0 A E AR Repetitive Avalanche Energy (Note 1) 7.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T A = 25 ) * 2.5 W Power Dissipation (T C = 25 70 W 0.56 W/ T J, TSTG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 2 1 2 3 1 3 |
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