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HIRC3020Q13-B20 Datasheet(PDF) 2 Page - CT Micro International Corporation |
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HIRC3020Q13-B20 Datasheet(HTML) 2 Page - CT Micro International Corporation |
2 / 8 page CT Micro Rev 0(Preliminary) Proprietary & Confidential Page 2 Jan, 2014 HIRC3020Q13-B20 SMD Type 850nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters Ratings Units Notes IF Continuous Forward Current 70 mA IFP Peak Forward Current 0.7 A 1 VR Reverse Voltage 5 V Topr Operating Temperature -40 ~ +85 0C Tstg Storage Temperature -40 ~ +100 0C Tsol Soldering Temperature 260 0C 2 PD Power Dissipation at(or below) 25℃ Free Air Temperature 140 mW Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes Ie Radiant Intensity IF=20mA 1.5 3.0 - mW/sr IF =70mA - 10 - λp Peak Wavelength IF=20mA - 850 - nm Δλ Spectral Bandwidth IF=20mA - 30 - nm θ1/2 Angle of Half Intensity IF=20mA - 60 - deg Electrical Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VF Forward Voltage IF=20mA 1.30 1.40 1.7 V IF=70mA 1.40 1.60 2.0 IR Reverse Current VR=5V - - 10 μA Notes: 1 : IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%. 2 : Soldering time≦ 5 seconds. |
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