QID3340001 datasheet(2/6 Pages) POWEREX

Part #	QID3340001

Description	Dual IGBT HVIGBT Module 400 Amperes/3300 Volts

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Manufacturer	POWEREX [Powerex Power Semiconductors]

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QID3340001

Dual IGBT HVIGBT Module

400 Amperes/3300 Volts

2

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

11/14 Rev. 5

Preliminary

Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.

The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

Absolute Maximum Ratings,

Tj = 25 °C unless otherwise specified

Ratings

Symbol

QID3340001

Units

Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +150°C)

VCES

3300

Volts

Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)

VCES

3200

Volts

Junction Temperature

Tj

-50 to 150

°C

Operating Junction Temperature

Tjop

-50 to 150

°C

Storage Temperature

Tstg

-55 to 150

°C

Gate-Emitter Voltage (VCE = 0V)

VGES

±20

Volts

Collector Current (TC = 95°C)

IC

400

Amperes

Peak Collector Current (Pulse)

ICM

800*

Amperes

Diode Forward Current** (TC = 99°C)

IF

400

Amperes

Diode Forward Surge Current** (Pulse)

IFM

800*

Amperes

Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C)

PC

3560

Watts

Mounting Torque, M4/M8 Terminal Screws

—

2/15

N·m

Mounting Torque, M6 Mounting Screws

—

6

N·m

Module Weight (Typical)

—

900

Grams

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)

Viso

6

kVolts

Partial Discharge

Qpd

10

pC

(V1 = 3500 Vrms, V2 = 2600 Vrms, f = 60Hz (Acc. to IEC 1287))

Maximum Short-Circuit Pulse Width,

tpsc

10

µs

(VCC ≤ 2500V, VCE ≤ VCES, VGE = +15V/-8V, Tj = 150°C)

Electrical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V, Tj = 25°C

—

2.0

mA

VCE = VCES, VGE = 0V, Tj = 125°C

—

2.0

—

mA

VCE = VCES, VGE = 0V, Tj = 150°C

—

10

—

mA

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

—

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 30mA, VCE = 10V

5.7

6.2

6.7

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 400A, VGE = 15V, Tj = 25°C

—

2.7***

3.3

Volts

IC = 400A, VGE = 15V, Tj = 125°C

—

3.4

4.0

Volts

IC = 400A, VGE = 15V, Tj = 150°C

—

3.6

—

Volts

Total Gate Charge

QG

VCC = 1800V, IC = 170A, VGE = 15V

—

3.6

—

µC

Emitter-Collector Voltage**

VEC

IE = 400A, VGE = 0V, Tj = 25°C

—

2.3

3.0

Volts

IE = 400A, VGE = 0V, Tj = 125°C

—

2.45

—

Volts

IE = 400A, VGE = 0V, Tj = 150°C

—

2.40

—

Volts

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

***Pulse width and repetition rate should be such that device junction temperature rise is negligible.

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