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QID3340001 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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QID3340001 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 6 page QID3340001 Dual IGBT HVIGBT Module 400 Amperes/3300 Volts 2 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 Rev. 5 Preliminary Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QID3340001 Units Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +150°C) VCES 3300 Volts Collector-Emitter Voltage (VGE = 0V, Tj = -50°C) VCES 3200 Volts Junction Temperature Tj -50 to 150 °C Operating Junction Temperature Tjop -50 to 150 °C Storage Temperature Tstg -55 to 150 °C Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (TC = 95°C) IC 400 Amperes Peak Collector Current (Pulse) ICM 800* Amperes Diode Forward Current** (TC = 99°C) IF 400 Amperes Diode Forward Surge Current** (Pulse) IFM 800* Amperes Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C) PC 3560 Watts Mounting Torque, M4/M8 Terminal Screws — 2/15 N·m Mounting Torque, M6 Mounting Screws — 6 N·m Module Weight (Typical) — 900 Grams Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 6 kVolts Partial Discharge Qpd 10 pC (V1 = 3500 Vrms, V2 = 2600 Vrms, f = 60Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, tpsc 10 µs (VCC ≤ 2500V, VCE ≤ VCES, VGE = +15V/-8V, Tj = 150°C) Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V, Tj = 25°C — — 2.0 mA VCE = VCES, VGE = 0V, Tj = 125°C — 2.0 — mA VCE = VCES, VGE = 0V, Tj = 150°C — 10 — mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 5.7 6.2 6.7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C — 2.7*** 3.3 Volts IC = 400A, VGE = 15V, Tj = 125°C — 3.4 4.0 Volts IC = 400A, VGE = 15V, Tj = 150°C — 3.6 — Volts Total Gate Charge QG VCC = 1800V, IC = 170A, VGE = 15V — 3.6 — µC Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V, Tj = 25°C — 2.3 3.0 Volts IE = 400A, VGE = 0V, Tj = 125°C — 2.45 — Volts IE = 400A, VGE = 0V, Tj = 150°C — 2.40 — Volts *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***Pulse width and repetition rate should be such that device junction temperature rise is negligible. |
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