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178021501 Datasheet(PDF) 7 Page - Wurth Elektronik GmbH & Co. KG, Germany.

Part # 178021501
Description  Variable Step Down Regulator Module
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Manufacturer  WURTH [Wurth Elektronik GmbH & Co. KG, Germany.]
Direct Link  http://www.we-online.com
Logo WURTH - Wurth Elektronik GmbH & Co. KG, Germany.

178021501 Datasheet(HTML) 7 Page - Wurth Elektronik GmbH & Co. KG, Germany.

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Würth Elektronik eiSos GmbH & Co. KG - Data Sheet - REV 1.0
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WPMDU1251501 / 171021501
MagI³C Power Module
VDRM - Variable Step Down Regulator Module
SYMBOL
PARAMETER
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
UNIT
Transient Response
TTR
Transient response
Recovery time
1A/µs load step from 50
to 100%,
-
400
-
µs
VTR
Transient response VOUT
over/undershoot
1A/µs load step from 50
to 100%,
-
90
-
mV
Quiescent current
IQ
Input quiescent current
EN = 0V, TA = 25°C,
3.5V ≤ VIN ≤ 60V
1.3
4
µA
Non switching:
VFB = 0.83V,
TA = 25°C, VIN = 12 V
200
µA
RELIABILITY
SYMBOL
PARAMETER
TEST CONDITIONS
MIN (1)
TYP (2)
MAX (1)
UNIT
MTBF
Mean Time Between
Failures
Confidence level 60%,
TA=55°C, Activation energy
0.7eV, 1000 hrs test duration,
46185 samples, 1 fail
1.79·109
h
NOTES
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed
through correlation using Statistical Quality Control (SQC) methods.
(2) Typical numbers are valid at 25°C ambient temperature and represent statistically the utmost probability assuming
the Gaussian distribution.
(3) Depending on heat sink design, number of PCB layers, copper thickness and air flow.
(4) Measured on a 100 x 100mm four layer board, with 35µm (1 ounce) copper, no air flow
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real
system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJT * Pdis + TT; where Pdis is the power
dissipated in the device and TT is the temperature of the top of the device.
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real
system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB * Pdis + TB; where Pdis is the power
dissipated in the device and TB is the temperature of the board 1mm from the device.
(7) The stated limit of the feedback voltage tolerance includes the tolerance of both the internal voltage reference and
the internal adjustment resistor RSET INT. The overall output voltage tolerance is affected by the tolerance of the
external RSET resistor.
(8) Value when no voltage divider is present at the EN/UVLO pin.


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