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CLC5509CM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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CLC5509CM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 11 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage ±5.5V Output Current 70mA Common-Mode Input Voltage ±V CC Maximum Junction Temperature +150˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (soldering 10 sec) +300˚C ESD Rating (human body model) 4000V Electrical Characteristics (Note 3) (V CC,VEE = ±5V, RS = 50Ω,AV = 10V/V, Rg = 1kΩ,RL = 100Ω; unless specified) Symbol Parameter Conditions Typ Min/Max Ratings (Note 2) Units Ambient Temperature CLC5509 +25˚C +25˚C Frequency Domain Response -3dB Bandwidth V O< 2.0VPP High Cutoff −3dB 33 28 45 MHz Low Cutoff −3dB 0.5 0.4 0.7 MHz Gain Flatness Inband 2 < 12.5MHz, V O< 1.0VPP −1.5 +.1 dB Gain Accuracy @ 5MHz ±0.3 dB Phase Variation 3 < 9MHz, V O < .1VPP 1 Deg Gain Variation 3 < 9MHz, V O < .1VPP .3 dB Time Domain Response Rise and Fall Time 2V step 10 10 15 ns Settling Time to 0.2% 2V step 1 µs Overshoot 2V step 0 5 % Group Delay 2.5MHz < 10MHz, V IN = 10mVPP 5.5 3 7.5 ns Group Delay Repeatability .5 ns Distortion And Noise Response 2nd Harmonic Distortion < 12.5MHz, V IN = 100mVPP −51 dBc 3rd Harmonic Distortion −56 dBc Intermodulation Distortion @ 5MHz −65 dBc Equivalent Input Noise Voltage (e ni) > 1MHz, R S = 50Ω 0.7 0.78 nV Noise Figure @ 50 Ω 2 2.4 dB Optimum R S 85 80 110 Ω Static, DC Performance PSRR (preamp only) < 1MHz 40 dB Supply Current (preamp only) R L = ∞ 911 mA Miscellaneous Performance Output Impedance DC < 12MHz 0.2 0.2 1 Ω Output Voltage Range R L = 100Ω ±2 ±1.7 V Output Current ±45 ±35 mA www.national.com 3 |
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