HY628100B-I datasheet(2/10 Pages) HYNIX

Part #	HY628100B-I

Description	128K x8 bit 5.0V Low Power CMOS slow SRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY628100B Series

Rev 12 / Apr.2001

2

DESCRIPTION

The HY628100B is a high speed, low power and

1M bit CMOS Static Random Access Memory

organized

as

131,072

words

by

8bit.

The

HY628100B

uses

high

performance

CMOS

process technology and designed for high speed

low power circuit technology. It is particulary well

suited for used in high density low power system

application. This device has a data retention

mode that guarantees data to remain valid at a

minimum power supply voltage of 2.0V.

FEATURES

• Fully static operation and Tri-state output

• TTL compatible inputs and outputs

• Battery backup(L/LL-part)

-. 2.0V(min) data retention

• Standard pin configuration

-. 32pin SOP - 525mil

-. 32pin TSOPI - 8X20(Standard)

Product

Voltage

Speed

Operation

Standby Current(uA)

Temperature

No

(V)

(ns)

Current/Icc(mA)

L

LL

(

°C)

HY628100B

4.5~5.5

50*/55/70/85

10

100

20

0~70

HY628100B-E

4.5~5.5

50*/55/70/85

10

100

30

-25~85

HY628100B-I

4.5~5.5

50*/55/70/85

10

100

30

-40~85

Comment : 50ns is available with 30pF test load.

PIN CONNECTION

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

Vcc

A15

/WE

A13

A8

A9

A11

/OE

A10

/CS1

I/O8

I/O7

I/O6

I/O5

I/O4

NC

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O1

I/O2

I/O3

Vss

CS2

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

/OE

A10

DQ8

DQ7

DQ6

DQ5

DQ4

Vss

DQ3

DQ2

DQ1

A0

A1

A2

A3

A11

A9

A8

A13

/WE

CS2

A15

Vcc

NC

A16

A14

A12

A7

A6

A5

A4

/CS1

SOP

TSOP-I(Standard)

PIN DESCRIPTION

BLOCK DIAGRAM

Pin Name

Pin Function

/CS1

Chip Select 1

CS2

Chip Select 2

/WE

Write Enable

/OE

Output Enable

A0 ~ A16

Address Inputs

I/O1 ~ I/O8

Data Inputs / Outputs

Vcc

Power(4.5V~5.5V)

Vss

Ground

MEMORY ARRAY

128K x 8

ROW

DECODER

I/O1

I/O8

A0

A16

/CS1

CS2

/OE

/WE

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HY628100B-I Datasheet(PDF) 2 Page - Hynix Semiconductor

HY628100B-I Datasheet(HTML) 2 Page - Hynix Semiconductor

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