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HY628100BLLT1 Datasheet(PDF) 8 Page - Hynix Semiconductor |
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HY628100BLLT1 Datasheet(HTML) 8 Page - Hynix Semiconductor |
8 / 10 page HY628100B Series Rev 12 / Apr.2001 7 DATA RETENTION ELECTRIC CHARACTERISTIC TA = 0 °C to 70°C / -25°C to 85°C (E) / -40¡ Éto 85¡ É(I), unless otherwise specified Sym Parameter Test Condition Min Typ Max Unit VDR Vcc for Data Retention /CS1 > Vcc - 0.2V or CS2 < 0.2V, VIN > Vcc - 0.2V or VIN < Vss + 0.2V 2.0 - - V ICCDR Data HY628100B Vcc = 3.0V, L - 2 50 uA Retention /CS1>Vcc-0.2V or CS2< 0.2V, LL - 1 10 uA Current HY628100B-E/I VIN > Vcc - 0.2V or L - 2 50 uA VIN < Vss + 0.2V LL - 1 15 uA tCDR Chip Deselect to Data Retention Time 0 - - ns tR Operating Recovery Time tRC (2) - - ns Notes: 1. Typical values are under the condition of TA = 25 °C. 2. tRC is read cycle time. DATA RETENTION TIMING DIAGRAM 1 CS1 VDR CS1>VCC-0.2V tCDR tR VSS VCC 4.5V 2.2V DATA RETENTION MODE DATA RETENTION TIMING DIAGRAM 2 0.4V VDR tCDR tR VSS VCC 4.5V CS2 DATA RETENTION MODE CS2<0.2V |
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