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LE28DW1621T-80T Datasheet(PDF) 4 Page - Sanyo Semicon Device |
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LE28DW1621T-80T Datasheet(HTML) 4 Page - Sanyo Semicon Device |
4 / 20 page 4 16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) 4 SANYO Electric Co.,Ltd. Semiconductor Company 1-1-1 Sakata Oizumi Gunma Japan R.1.20(4/27/2000) No.xxxx-4/20 Product Identification Table Device ID codes are unique to each bank. Should a chip ID be required, any of the bank IDs may be used as the chip ID. While in the read software ID mode, no other operation is allowed until after exiting these modes. Product Identification Mode Exit In order to return to the standard Read mode, the Product Identification mode must be exited. Exit is accomplished by issuing the Software ID exit command, which returns the device to normal operation. This command may also be used to reset the device to the Read mode after any inadvert- ent transient condition that apparently causes the device to behave abnormally, e.g., not read correctly. For details, (see Table 3 for software operation and Figures 9 for timing waveforms.) word load sequence is used to initiate the Program cycle, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. The six-word sequence is required to initiate any Chip, Block, or Sector Erase operation. The requirements for JEDEC compliant SDP are in byte format. The LE28DW1621T is organized by word; therefore, the con- tents of DQ8 to DQ15 are "Don't Care"during any SDP (3-word or 6-word) command sequence. During the SDP load command sequence, the SDP load cycle is suspended when WE# is high. This means a read may occur to any other bank during the SDP load sequence. The bank reserve in SDP load sequence is reserved by the bus cycle of command materialization. If the command sequence is aborted, e.g., an incorrect address is loaded, or incorrect data is loaded, the device will return to the Read mode within TRC of execution of the load error. Concurrent Read and Write Operations The LE28DW1621T provides the unique benefit of being able to read any bank, while simultaneously erasing, or programming one other bank. This allows data alteration code to be executed from one bank, while altering the data in another bank. The next table lists all valid states. Concurrent Read/Write State Table Note: For the purposes of this table, write means to Block, Sector, or Chip Erase, or Word Program as applicable to the appropriate bank. The device will ignore all SDP commands and toggling of WE# when an Erase or Program operation is in progress. Note, Product Identification entry commands use SDP; therefore, this command will also be ignored while an Erase or Program, operation is in progress. Product Identification The product identification mode identifies the device manufac- turer as SANYO and provides a code to identify each bank. The manufacturer ID is the same for each bank; however, each bank has a separate device ID. Each bank is individually accessed using the applicable Bank Address and a software command. Users may wish to use the device ID operation to identifythe write algorithm requirements for each bank. (For details, see Table 3 for software operation and Figures 8 for timing waveforms. ) 1 k n a B2 k n a B d a e Rn o i t a r e p O o N d a e Re t i r W e t i r Wd a e R n o i t a r e p O o Ne t i r W e t i r Wn o i t a r e p O o N n o i t a r e p O o Nd a e R d r o W a t a D ) e d o M d r o W ( a t a D ) e d o M e t y B ( D I r e k a MH 0 0 0 0H 2 6 0 0H 2 6 e d o C e c i v e D 1 k n a B ( )H 1 0 0 0H E 7 5 2H E 7 e d o C e c i v e D ) 2 k n a B ( H 1 0 0 0H D 7 5 2H D 7 Figure 1 : Pin Description : TSOP-1 (12mm x 20mm) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RESET# NC WP# RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VDD DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 (12mm x 20mm) TSOP-I Normal Bend |
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