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CY7C146-35LMB Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C146-35LMB
Description  2Kx8 Dual-Port Static RAM
Download  18 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C146-35LMB Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C132/CY7C136
CY7C142/CY7C146
6
WRITE CYCLE[15]
tWC
Write Cycle Time
35
45
55
ns
tSCE
CE LOW to Write End
30
35
40
ns
tAW
Address Set-Up to Write End
30
35
40
ns
tHA
Address Hold from Write End
2
2
2
ns
tSA
Address Set-Up to Write Start
0
0
0
ns
tPWE
R/W Pulse Width
25
30
30
ns
tSD
Data Set-Up to Write End
15
20
20
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE
R/W LOW to High Z [10]
20
20
25
ns
tLZWE
R/W HIGH to Low Z [10]
00
0
ns
BUSY/INTERRUPT TIMING
tBLA
BUSY LOW from Address Match
20
25
30
ns
tBHA
BUSY HIGH from Address Mismatch[16]
20
25
30
ns
tBLC
BUSY LOW from CE LOW
20
25
30
ns
tBHC
BUSY HIGH from CE HIGH[16]
20
25
30
ns
tPS
Port Set Up for Priority
5
5
5
ns
tWB
R/W LOW after BUSY LOW[17]
00
0
ns
tWH
R/W HIGH after BUSY HIGH
30
35
35
ns
tBDD
BUSY HIGH to Valid Data
35
45
45
ns
tDDD
Write Data Valid to Read Data Valid
Note
18
Note
18
Note
18
ns
tWDD
Write Pulse to Data Delay
Note
18
Note
18
Note
18
ns
INTERRUPT TIMING[19]
tWINS
R/W to INTERRUPT Set Time
25
35
45
ns
tEINS
CE to INTERRUPT Set Time
25
35
45
ns
tINS
Address to INTERRUPT Set Time
25
35
45
ns
tOINR
OE to INTERRUPT Reset Time[16]
25
35
45
ns
tEINR
CE to INTERRUPT Reset Time[16]
25
35
45
ns
tINR
Address to INTERRUPT Reset Time[16]
25
35
45
ns
Notes:
11.
Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading of the specified
IOL/IOH, and 30-pF load capacitance.
12. AC test conditions use VOH = 1.6V and VOL = 1.4V.
13. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE.
14. tLZCE, tLZWE, tHZOE, tLZOE, tHZCE, and tHZWE are tested with CL = 5pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
15. The internal write time of the memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
16. These parameters are measured from the input signal changing, until the output pin goes to a high-impedance state.
17. CY7C142/CY7C146 only.
18. A write operation on Port A, where Port A has priority, leaves the data on Port B’s outputs undisturbed until one access time after one of the following:
BUSY on Port B goes HIGH.
Port B’s address toggled.
CE for Port B is toggled.
R/W for Port B is toggled during valid read.
19. 52-pin PLCC and PQFP versions only.
Switching Characteristics Over the Operating Range[6, 11] (continued)
7C132-35
7C136-35
7C142-35
7C146-35
7C132-45
7C136-45
7C142-45
7C146-45
7C132-55
7C136-55
7C142-55
7C146-55


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