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RA08H1317 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # RA08H1317
Description  135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA08H1317 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RA 08H1317 M
RA08H1317M
MITSUBISHI ELECTRIC
23 Dec 2002
8/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50
Ω?
c) Is the source impedance ZG=50
Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and
can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced
mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding
those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.
Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are
caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the pos sibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any
malfunction or mishap.
Keep safety first in your circuit designs!


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