AMIS−42670

http://onsemi.com

3

Table 3. ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Conditions

Min.

Max.

Unit

Supply Voltage

−0.3

+7

V

DC Voltage at Pin CANH

−45

+45

V

DC Voltage at Pin CANL

−45

+45

V

DC Voltage at Pin TxD

−0.3

V

DC Voltage at Pin RxD

−0.3

V

DC Voltage at Pin S

−0.3

V

−0.3

V

Transient Voltage at Pin CANH

Note 2

−150

+150

V

Transient Voltage at Pin CANL

Note 2

−150

+150

V

Electrostatic Discharge Voltage at All Pins

Note 3

Note 5

−4

−750

+4

+750

kV

V

Latch−up

Static Latch−up at All Pins

Note 4

100

mA

Storage Temperature

−55

+155

°C

Ambient Temperature

−40

+125

°C

Maximum Junction Temperature

−40

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).

3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.

4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.

5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.

Table 4. THERMAL CHARACTERISTICS

Symbol

Parameter

Conditions

Value

Unit

Thermal Resistance from Junction−to−Ambient in

SOIC−8 Package

In Free Air

150

k/W

Thermal Resistance from Junction−to−Substrate

of Bare Die

In Free Air

45

k/W

APPLICATION INFORMATION

AMIS−

42670

CANH

CANL

GND

RxD

TxD

VREF

2

1

3

45

6

7

8

PC20070831.3

S

CAN

controller

VBAT

5V−reg

IN

OUT

47 nF

60 W

60 W

CAN

BUS

47 nF

60 W

60 W

GND

Figure 2. Application Diagram