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NCP1217AD133R2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP1217AD133R2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 19 page NCP1217, NCP1217A www.onsemi.com 3 Figure 2. Internal Circuit Architecture Overload Management UVLO High and Low ±500 mA HV Current Source Internal VCC 8 7 6 5 HV NC VCC Drv 1 2 3 4 Q Flip−Flop DCmax = 74% Q 250 ns L.E.B. 65−100−133 kHz Clock - + - + 80 k 20 k 57 k 1 V Current Sense Ground FB Adj 24 k 25 k + − VREF Reset 1.1 V Skip Cycle Comparator Set 19 k Ramp Compensation Reset - + Latchoff Comparator + − Latch Reset Set 3.1 V UVLO 1ms SS* * Available for “A” version only MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage VCC 16 V Power Supply Voltage on All Other Pins Except Pin 8 (HV), Pin 6 (VCC) and Pin 5 (Drv) − −0.3 to 10 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Decoupled to Ground with 10 mF VHV 500 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Grounded VHV 450 V Minimum Operating Voltage on Pin 8 (HV) 28 V Maximum Current into All Pins Except VCC (6) and HV (8) when 10 V ESD Diodes are Activated − 5.0 mA Thermal Resistance, Junction−to−Case RqJC 57 °C/W Thermal Resistance, Junction−to−Air, PDIP−7 Version Thermal Resistance, Junction−to−Air, SO−8 Version RqJA RqJA 100 178 °C/W Maximum Junction Temperature TJMAX 150 °C Temperature Shutdown − 155 °C Hysteresis in Shutdown − 30 °C Storage Temperature Range − −60 to +150 °C ESD Capability, HBM Model (All Pins Except VCC and HV) − 2.0 kV ESD Capability, Machine Model − 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection rated using the following tests: Human Body Model (HBM) 2000 V per JEDEC Standard JESD22, Method A114E. Machine Model (MM) 200 V per JEDEC Standard JESD22, Method A115A. |
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