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BAT64X Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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BAT64X Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes BAT64X SCHOTTLKY BARRIER DIODE FEATURES For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward MARKING: t Maximum Ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Peak reverse voltage DC reverse VRM VR 40 V Non-repetitive Peak surge forward current @t=8.3ms IFSM 0.8 A Mean rectifying current IO 0.25 A Power Dissipation PD 150 mW Thermal Resistance from Junction to Ambient RθJA 667 ℃/W Junction temperature Tj 1 25 ℃ Storage temperature Tstg -55~+1 50 ℃ Electrical Ratings (Ta=25℃ unless otherwise noted ) Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage VR 40 V IR=10μA Forward voltage VF 350 430 520 750 mV IF=1mA IF=10mA IF=30mA IF=100mA Reverse current IR 2 μA VR=30V Capacitance between terminals CT 6 pF VR=1V,f=1MHz Reverse recovery time trr 5 ns IF=10mA,IR=10mA, IR=1mA,RL=100 Ω SOD-523 1 E,Mar,2015 www.cj-elec.com |
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