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AS7C256L-20PC Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation |
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AS7C256L-20PC Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation |
2 / 8 page AS7C256 AS7C256L 2 The AS7C256 is a high performance CMOS 262,144-bit Static Random Access Memory (SRAM) organized as 32,768 words × 8 bits. It is designed for memory applica- tions where fast data access, low power, and simple interfac- ing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20/25/35 ns with output enable access times (tOE) of 3/3/4/5/6/8 ns are ideal for high performance applica- tions. A chip enable (CE) input permits easy memory expansion with multiple-bank memory organizations. When CE is HIGH the device enters standby mode. The standard AS7C256 is guaranteed not to exceed 11 mW power consumption in standby mode; the L version is guar- anteed not to exceed 2.75 mW, and typically requires only 500 µW. The L version also offers 2.0V data retention, with maximum power consumption in this mode of 300 µW. A write cycle is accomplished by asserting chip enable (CE) and write enable (WE) LOW. Data on the input pins I/O0-I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting chip enable (CE) and output enable (OE) LOW, with write enable (WE) HIGH. The chip drives I/O pins with the data word refer- enced by the input address. When chip enable or output enable is HIGH, or write enable is LOW, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible, and opera- tion is from a single 5V supply. The AS7C256 is packaged in all high volume industry standard packages. FUNCTIONAL DESCRIPTION . Parameter Symbol Min Max Unit Voltage on Any Pin Relative to GND Vt –0.5 +7.0 V Power Dissipation PD – 1.0 W Storage Temperature (Plastic) Tstg –55 +150 oC Temperature Under Bias Tbias –10 +85 oC DC Output Current Iout –20 mA NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CE WE OE Data Mode HXXHigh Z Standby (ISB, ISB1) L H H High Z Output Disable LH LDout Read LLX Din Write Key: X = Don’t Care, L = LOW, H = HIGH ABSOLUTE MAXIMUM RATINGS TRUTH TABLE |
Similar Part No. - AS7C256L-20PC |
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Similar Description - AS7C256L-20PC |
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