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IS42S32200-6T Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc |
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IS42S32200-6T Datasheet(HTML) 3 Page - Integrated Silicon Solution, Inc |
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3 / 55 page  IS42S32200 ISSI® Integrated Silicon Solution, Inc. — 1-800-379-4774 3 ADVANCE INFORMATION Rev. 00B 08/14/03 PIN FUNCTIONS Symbol Pin No. Type Function (In Detail) A0-A10 25 to 27 Input Pin Address Inputs: A0-A10 are sampled during the ACTIVE 60 to 66 command (row-address A0-A10) and READ/WRITE command (A0-A7 24 with A10 defining auto precharge) to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine if all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. BA0, BA1 22,23 Input Pin Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ, WRITE or PRECHARGE command is being applied. CAS 18 Input Pin CAS, in conjunction with the RAS and WE, forms the device command. See the "Command Truth Table" for details on device commands. CKE 67 Input Pin The CKE input determines whether the CLK input is enabled. The next rising edge of the CLK signal will be valid when is CKE HIGH and invalid when LOW. When CKE is LOW, the device will be in either power-down mode, clock suspend mode, or self refresh mode. CKE is an asynchronous input. CLK 68 Input Pin CLK is the master clock input for this device. Except for CKE, all inputs to this device are acquired in synchronization with the rising edge of this pin. CS 20 Input Pin The CS input determines whether command input is enabled within the device. Command input is enabled when CS is LOW, and disabled with CS is HIGH. The device remains in the previous state when CS is HIGH. I/O0 to 2, 4, 5, 7, 8, 10,11,13 I/O Pin I/O0 to I/O15 are I/O pins. I/O through these pins can be controlled in byte units I/O31 74,76,77,79,80,82,83,85 using the DQM0-DQM3 pins 45,47,48,50,51,53,54,56 31,33,34,36,37,39,40,42 DQM0 16,28,59,71 Input Pin DQMx control thel ower and upper bytes of the I/O buffers. In read mode, DQM3 the output buffers are place in a High-Z state. During a WRITE cycle the input data is masked. When DQMx is sampled HIGH and is an input mask signal for write accesses and an output enable signal for read accesses. I/O0 through I/O7 are controlled by DQM0. I/O8 throughI/O15 are controlled by DQM1. I/O16 through I/ O23 are controlled by DQM2. I/O24 through I/O31 are controlled by DQM3. RAS 19 Input Pin RAS, in conjunction with CAS and WE, forms the device command. See the "Command Truth Table" item for details on device commands. WE 17 Input Pin WE, in conjunction with RAS and CAS, forms the device command. See the "Command Truth Table" item for details on device commands. VCCQ 3,9,35,41,49,55,25,81 Supply Pin VCCQ is the output buffer power supply. VCC 1,15,29,43 Supply Pin VCC is the device internal power supply. GNDQ 6,12,32,38,46,52,78,84 Supply Pin GNDQ is the output buffer ground. GND 44,58,72,86 Supply Pin GND is the device internal ground. |
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