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IS61LV256-12N Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part # IS61LV256-12N
Description  32K x 8 LOW VOLTAGE CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61LV256-12N Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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ISSI®
IS61LV256
2-4
Integrated Silicon Solution, Inc.
Rev. F 0296
SR81995LV61
AC TEST LOADS
635
30 pF
Including
jig and
scope
702
OUTPUT
3.3V
635
5 pF
Including
jig and
scope
702
OUTPUT
3.3V
Figure 1a.
Figure 1b.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Levels
Output Load
See Figures 1a and 1b
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-12 ns
-15 ns
-20 ns
-25 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tRC
Read Cycle Time
12
15
20
25
ns
tAA
Address Access Time
12
15
20
25
ns
tOHA
Output Hold Time
2
2
2
2
ns
tACE
CE Access Time
12
15
20
25
ns
tDOE
OE Access Time
6
7
8
9
ns
tLZOE(2)
OE to Low-Z Output
0
0
0
0
ns
tHZOE(2)
OE to High-Z Output
7
8
9
10
ns
tLZCE(2)
CE to Low-Z Output
3
3
3
3
ns
tHZCE(2)
CE to High-Z Output
5
6
9
10
ns
tPU(3)
CE to Power-Up
0
0
0
0
ns
tPD(3)
CE to Power-Down
13
15
18
20
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured
±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.


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