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RB480V Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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RB480V Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 4 page JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes RB480V SCHOTTLKY BARRIER DIODE FEATURES Low current rectification High reliability MARKING: 3T Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse VR 40 V Non-repetitive Peak Forward Surge Current@t=8.3ms IFSM 1 A Mean rectifying current IO 0.1 A Electrical Ratings @Ta=25℃ Parameter Sy mbol Min Typ Max Unit Conditions Forward voltage VF 450 600 mV IF=10mA IF=100mA Reverse current IR 1 5 µA VR=10V VR=40V Capacitance between terminals CT 6 25 pF VR=0V VR=10V,f=1MHz SOT-553 5 1 2 4 3 Junction temperature Tj 125 ℃ Storage temperature Tstg -55~+150 ℃ Power Dissipation PD 150 mW Thermal Resistance Junction to Ambient RθJA 667 ℃ /W 1 F,Dec,2015 www.cj-elec.com Solid dot = Pin1 indicate. 3T 3T Solid dot = Green molding compound device,if none, the normal device. |
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