2SJ358C-T1-AZ datasheet(1/8 Pages) RENESAS

Part #	2SJ358C-T1-AZ

Description	P-CHANNEL MOSFET FOR SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS1262EJ0300 Rev.3.00

Page 1 of 6

Aug 17, 2015

Preliminary Data Sheet

2SJ358C

P-CHANNEL MOSFET FOR SWITCHING

Description

The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven

directly by a 4.0 V power source.

Features

 Directly driven by a 4.0 V power source.

 Low on-state resistance

RDS(on)1 = 143 m

 MAX. (VGS = -10 V, ID = -2.0 A)

RDS(on)2 = 179 m

 MAX. (VGS = -4.5 V, ID = -2.0 A)

RDS(on)3 = 190 m

 MAX. (VGS = -4.0 V, ID = -2.0 A)

Ordering Information

Part Number

Lead Plating

Packing

Package

2SJ358C-T1-AZ/AY

-AZ : Sn-Bi , -AY : Pure Sn

1000p/Reel

SC-84 (MP-2)

Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.

Marking XT1

Absolute Maximum Ratings (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

-60

V

Gate to Source Voltage (VDS = 0 V)

VGSS

∓

20

V

Drain Current (DC)

ID(DC)

∓

3.5

A

Drain Current (pulse) Note1

ID(pulse)

∓

14

A

Total Power Dissipation Note2

PT

2.0

W

Channel Temperature

Tch

150

C

Storage Temperature

Tstg

55 to 150

C

Note1 PW

 10

s, Duty Cycle  1%

Note2 16 cm2 X 0.7mm, ceramic substrate used

R07DS1262EJ0300

Rev.3.00

Aug 17, 2015

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